PART |
Description |
Maker |
NB7L216MNR2 NB7L216MNR2G NB7L216MNG NB7L216 NB7L21 |
2.5V/3.3V, 12Gb/s Multi Level Clock/Data Input to RSECL, High Gain Receiver/Buffer/Translator with Internal Termination
|
ONSEMI[ON Semiconductor]
|
M36L0R7040B0 M36L0R7040B0ZAQE M36L0R7040B0ZAQF M36 |
128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package
|
ST Microelectronics STMicroelectronics
|
SAS9361-4I |
High Performance 12Gb/s PCI Express SATA SAS RAID Controller
|
AVAGO TECHNOLOGIES LIMI...
|
NB7L86M |
2.5V/3.3V 12 Gb/s Differential Clock/Data SmartGate with CML Output and Internal Termination(带CML输出和内部终端的2.5V/3.3V 12Gb/s差分时钟/数据智能门极)
|
ON Semiconductor
|
M36L0R7050L1ZAMF M36L0R7050L1ZAME M36L0R7060U1ZAMF |
128 Mbit (Mux I/O, Multiple Bank, Multi-Level, Burst) Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package 128兆位(复用的I / O,多银行,多层次,多突发)快闪记忆体264兆移动存储芯片,1.8V电源多芯片封 128 Mbit (Mux I/O, Multiple Bank, Multi-Level, Burst) Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package 128兆位(复用的I / O,多银行,多层次,多突发)快闪记忆体24兆移动存储芯片,1.8V电源多芯片封
|
意法半导 STMicroelectronics N.V.
|
340-03B-4600 340-03B-4500 340-03B-4800 340-02A-280 |
Multi-level Series 多级系列
|
Electronic Theatre Controls, Inc.
|
NB7L1008M |
Multi-Level Inputs w/ Internal Termination
|
ON Semiconductor
|
NB7L72M NB7L72MMNG NB7L72MMNR2G |
Multi−Level Inputs w/ Internal Termination
|
ON Semiconductor
|
XMEGAD |
Interrupts and Programmable Multi-level Interrupt Controller
|
ATMEL Corporation
|
NB6VQ572M NB6VQ572MMNG NB6VQ572MMNR4G |
Multi−Level Inputs w/ Internal Termination
|
ON Semiconductor
|
M58LT128GST1ZA5E M58LT128GST1ZA5F M58LT128GS M58LT |
128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|